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data sheet, v1.0, october 2005 never stop thinking. bts 6142d smart high-side power switch profet one channel, 12 m ? automotive power
smart high-side power switch bts 6142d table of contents page data sheet 2 v1.0, 2005-10-25 product summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.1 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.2 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 2 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.1 pin assignment bts 6142d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 3.1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 block description and electrical characteristics . . . . . . . . . . . . . . . . . . . . . . .10 4.1 power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1.1 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.2 output on-state resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1.3 output inductive clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1.4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.2 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 4.2.1 over-load protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.2.2 short circuit impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.2.3 reverse polarity protection - reversavetm . . . . . . . . . . . . . . . . . . . . . . 18 4.2.4 over-voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2.5 loss of ground protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2.6 loss of vbb protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2.7 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3 diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 4.3.1 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 5 package outlines bts 6142d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
data sheet 3 v1.0, 2005-10-25 type ordering code package bts 6142d SP000074866 p-to-252-5-1 smart high-side power switch profet bts 6142d product summary the bts 6142d is a one channel high-side power switch in p-to-252-5-1 package providing embedded protective functions including reversave ? . the power transistor is built by a n-channel vertical power mosfet with charge pump. the design is based on smart sipmos chip on chip technology. basic features ? very low standby current current controlled input pin improved electromagnetic compatibility (emc) fast demagnetization of inductive loads stable behavior at under-voltage operating voltage v bb(on) 5.5..24v over-voltage protection v on(cl) 39 v on-state resistance r ds(on) 12 m ? nominal load current i l(nom) 7a load current (iso) i l(iso) 27 a current limitation i l6(sc) 50 a stand-by current for whole device with load i bb(off) 6a p-to-252-5-1
smart high-side power switch bts 6142d data sheet 4 v1.0, 2005-10-25 protective functions reversave ? , channel switches on in case of reverse polarity reverse battery protection without external components short circuit protection with latch over-load protection multi-step current limitation thermal shutdown with restart over-voltage protection (including load dump) loss of ground protection loss of v bb protection (with external diode for charged inductive loads) electrostatic discharge protection (esd) diagnostic functions proportional load current sense (with defined fault signal in case of overload operation, over temperature shutdown and/or short circuit shutdown) open load detection in on-state by load current sense applications c compatible high-side power switch with diagnostic feedback for 12 v grounded loads all types of resistive, inductive and capacitive loads most suitable for loads with high inrush currents, so as lamps replaces electromechanical relays, fuses and discrete circuits
smart high-side power switch bts 6142d overview data sheet 5 v1.0, 2005-10-25 1overview the bts 6142d is a one channel high-side power switch (12 m ? ) in p-to-252-5-1 power package providing embedded protective functions including reversave tm . reversave tm is a protection feature that causes the power transistors to switch on in case of reverse polarity. as a result, the power dissipation is reduced. the bts 6142d has a current controlled input and offers a diagnostic feedback with load current sense. the design is based on smart sipmos chip on chip technology. 1.1 block diagram figure 1 block diagram logic ic base chip v bb is out in load es d r is v is v in i in i l overview . emf t driver logic gate control & charge pump load current sense over temperature clamp for inductive load current limitation forward voltage drop detection voltage sensor i is r bb
smart high-side power switch bts 6142d overview data sheet 6 v1.0, 2005-10-25 1.2 terms following figure shows all terms used in this data sheet. figure 2 terms ter m s . em f v in out v is i is v bb i l v out i bb in vbb is i in v bin v bis v on r in r is bts 6142d
smart high-side power switch bts 6142d pin configuration data sheet 7 v1.0, 2005-10-25 2 pin configuration 2.1 pin assignment bts 6142d figure 3 pin configuration p-to-252-5-1 2.2 pin definitions and functions pin symbol i/o function 1outo output; output to the load; pin 1 and 5 must be externally shorted. 1) 1) not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability, the clamping capability and decrease the current sense accuracy. 2in i input; activates the power switch if shorted to ground. 3, tab v bb - supply voltage; positive power supply voltage; tab and pin 3 are internally shorted. 4is o sense output; diagnostic feedback; provides at normal operation a sense current proportional to the load current; in case of overload, over temperature and/or short circuit a defined current is provided (see table 1 "truth table" on page 23 ). 5outo output; output to the load; pin 1 and 5 must be externally shorted. 1) v bb tab 1 2 3 4 5 out out in is v bb to252-5 . emf
smart high-side power switch bts 6142d electrical characteristics data sheet 8 v1.0, 2005-10-25 3 electrical characteristics 3.1 maximum ratings stresses above the ones listed here may cause permanent damage to the device. exposure to maximum rating conditions for extended periods may affect device reliability. t j = 25 c (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. max. supply voltage 3.1.1 supply voltage v bb -16 38 v - 3.1.2 supply voltage for full short circuit protection (single pulse) ( t j = -40c .. 150c) 1) v bb(sc) 024v ? 3.1.3 supply voltage for load dump protection 2) v bb(ld) -45v r i = 2 ? r l = 1.5 ? logic pins 3.1.4 voltage at input pin v b,in -16 63 v - 3.1.5 current through input pin i in -140 15 ma - 3.1.6 voltage at current sense pin v b,is -16 56 v - 3.1.7 current through sense pin i is -140 15 ma - 3.1.8 input voltage slew rate 3) d v bin /d t -20 20 v/ s- power stages 3.1.9 load current 4) i l - i lx(sc) a- 3.1.10 maximum energy dissipation per channel (single pulse) e as -0.25j i l(0) = 20 a t j(0) = 150c 3.1.11 total power dissipation (dc) for whole device p tot -50w t c = 85 c t j 150 c temperatures 3.1.12 junction temperature t j -40 150 c - 3.1.13 storage temperature t stg -55 150 c -
smart high-side power switch bts 6142d electrical characteristics data sheet 9 v1.0, 2005-10-25 esd susceptibility 3.1.14 esd susceptibility hbm v esd -3 3 kv according to eia/jesd 22-a 114b 1) short circuit is defined as a combination of remaining resistances and inductances. see figure 13 . 2) load dump is specified in iso 7637, r i is the internal resistance of the load dump pulse generator 3) slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the input path. a series resistor r in in the input path is also required for reverse operation at v bb -16v. see also figure 14 . 4) current limitation is a protection feature. operation in current limitation is considered as ?outside? normal operating range. protection features are not designed for continuous repetitive operation. t j = 25 c (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. max.
smart high-side power switch bts 6142d power stages data sheet 10 v1.0, 2005-10-25 4 block description and electrical characteristics 4.1 power stages the power stage is built by a n-channel vertical power mosfet (dmos) with charge pump. 4.1.1 input circuit figure 4 shows the input circuit of the bts 6142d. the current source to v bb ensures that the device switches off in case of open input pin. the zener diode protects the input circuit against esd pulses. figure 4 input circuit a high signal at the required external small signal transistor pulls the input pin to ground. a logic supply current i in is flowing and the power dmos switches on with a dedicated slope, which is optimized in terms of emc emission. figure 5 switching a load (resistive) in r bb i v bb i nput. emf v z,in v in i in v bin v out t switchon.emf t i in 10% 25% 50% 90% t on t off d v/ d t on d v/ d t off
smart high-side power switch bts 6142d power stages data sheet 11 v1.0, 2005-10-25 4.1.2 output on-state resistance the on-state resistance r ds(on) depends on the supply voltage as well as the junction temperature t j . figure 6 shows these dependencies for the typical on-state resistance. the on-state resistance in reverse polarity mode is described in section 4.2.3 . figure 6 typical on-state resistance at small load currents the resistance is artificially increased to improve current sense accuracy. therefore the forward voltage drop v on at small load currents is no more proportional to the load current i l , but is controlled by an internal ?two level controller? to remain clamped to a defined value v on(nl). figure 7 shows the dependency for a typical device. ?
? v bb = 12 v t j = 25c
smart high-side power switch bts 6142d power stages data sheet 12 v1.0, 2005-10-25 figure 7 typical output voltage drop limitation 4.1.3 output inductive clamp when switching off inductive loads, the output voltage v out drops below ground potential due to the involved inductance ( -d i l /dt = -v l /l ; - v out ? -v l ). figure 8 output clamp to prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop across the device at a certain level ( v on(cl) ). see figure 8 and figure 9 for details. the maximum allowed load inductance is limited. v bb = 12 v t j = 25c out put clamp . emf out v bb vbb l , r l v out i l v on
smart high-side power switch bts 6142d power stages data sheet 13 v1.0, 2005-10-25 figure 9 switching an inductance maximum load inductance while de energizing inductive loads, energy has to be dissipated in the bts 6142d. this energy can be calculated via the following equation: in the event of de-energizing very low ohmic inductances ( r l 0) the following, simplified equation can be used: the energy, which is converted into heat, is limited by the thermal design of the component. for given starting currents the maximum allowed inductance is therefore limited. see figure 10 for the maximum allowed inductance at v bb =12v. v out i nduct iveload. emf t i l t v out(cl) v bb on off v on(cl) ev on cl () v bb v on cl () ? r l ---------------------------------------- ln ? 1 r l i l ? v on(cl) v bb ? -------------------------------------- - + ?? ?? ?? i l + l r l ------ ?? = e 1 2 -- - li l 2 v on(cl) v on(cl) v bb ? -------------------------------------- - ? =
smart high-side power switch bts 6142d power stages data sheet 14 v1.0, 2005-10-25 figure 10 maximum load inductance for single pulse, t j,start = 150c t j(o) 150c v bb = 12 v
smart high-side power switch bts 6142d power stages data sheet 15 v1.0, 2005-10-25 4.1.4 electrical characteristics v bb = 12 v, t j = 25 c (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max. general 4.1.1 operating voltage v bb 5.5 - 38 v v in = 0 v t j = -40..150 c 4.1.2 undervoltage shutdown 1) v bin(u) -2.53.5v - 4.1.3 undervoltage restart of charge pump v bb(ucp) -45.5v - 4.1.4 operating current i in -1.42.2ma t j = -40..150 c 4.1.5 stand-by current t j = -40 c, t j = 25 c t j 120 c 1) t j = 150 c i bb(off) - - - 3 3 9 6 6 16 a i in = 0 a input characteristics 4.1.6 input current for turn-on i in(on) -1.42.2ma v bin v bb(ucp) -v in , t j = -40 ? 150 c 4.1.7 input current for turn-off i in(off) --30 a t j = -40 ? 150 c output characteristics 4.1.8 on-state resistance t j =25 c t j =150 c v bb =5.5v, t j =25 c v bb =5.5v, t j =150 c r ds(on) - - - - 10 17 12 22 12 22 17 29 m ? v in =0v, i l =7.5a, (tab to pin 1 and 5) 4.1.9 output voltage drop limitation at small load currents v on(nl) -3065mv t j = -40..150 c 4.1.10 nominal load current (tab to pin1 & 5) 2) 3) i l(nom) 78.5 -a t a = 85 c v on 0.5 v, t j 150 c iso load current (tab to pin 1 & 5) 3) i l(iso) 27 33 - a t c = 85 c v on 0.5 v, t j 150 c
smart high-side power switch bts 6142d power stages data sheet 16 v1.0, 2005-10-25 note: characteristics show the deviation of parameter at the given supply voltage and junction temperature. typical values show the typical parameters expected from manufacturing. 4.1.11 output clamp v on(cl) 39 42 - v i l = 40 ma 4.1.12 inverse current output voltage drop 1) 4) (tab to pin 1 and 5) t j = 25 c t j = 150 c - v on(inv) - - 800 600 - - mv i l = -7.5 a, r is = 1 k ? timings 4.1.13 turn-on time to 90% v bb t on - 250 600 s r l = 2.2 ? , t j = -40 ? 150 c 4.1.14 turn-off time to 10% v bb t off - 250 600 s r l = 2.2 ? , t j = -40 ? 150 c 4.1.15 turn-on delay after inverse operation 1) v in(inv) = v in(fwd) = 0 v t d(inv) -1-ms v bb > v out 4.1.16 slew rate on 25% to 50% v bb d v / d t on -0.30.7v/s r l = 2.2 ? , t j = -40 ? 150 c 4.1.17 slew rate off 50% to 25% v bb -d v / d t off -0.30.7v/s r l = 2.2 ? , t j = -40 ? 150 c thermal resistance 4.1.18 junction to case 1) r thjc --1.3k/w- 4.1.19 junction to ambient 1) free air device on pcb 2) r thja - - 80 45 - 55 k/w - 1) not subject to production test, specified by design 2) device mounted on pcb (50 mm x 50 mm x 1.5mm epoxy, fr4) with 6 cm 2 copper heatsinking area (one layer, 70 m thick) for v bb connection. pcb is vertical without blown air. 3) not subject to production test, parameters are calculated from r ds(on) and r th 4) permanent inverse operation results eventually in a current flow via the intrinsic diode of the power dmos. in this case the device switches on with a time delay t d(inv) after the transition from inverse to forward mode. a sense current i is(fault) can be provided by the pin is until standard forward operation is reached. v bb = 12 v, t j = 25 c (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max.
smart high-side power switch bts 6142d protection functions data sheet 17 v1.0, 2005-10-25 4.2 protection functions the device provides embedded protective functions. integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are neither designed for continuous nor repetitive operation. 4.2.1 over-load protection the load current i l is limited by the device itself in case of over-load or short circuit to ground. there are multiple steps of current limitation i lx(sc) which are selected automatically depending on the voltage drop v on across the power dmos. please note that the voltage at the out pin is v bb - v on . figure 11 shows the dependency for a typical device. figure 11 typical current limitation depending on the severity of the short condition as well as on the battery voltage the resulting voltage drop across the device varies. whenever the resulting voltage drop v on exceeds the short circuit detection threshold v on(sc) , the device will switch off immediately and latch until being reset via the input. the v on(sc) detection functionality is activated, when v bin >10v typ. and the blanking time t d(sc1) expired after switch on. in the event that either the short circuit detection via v on(sc) is not activated or that the on chip temperature sensor senses over-temperature before the blanking time t d(sc1) expired, the device switches off resulting from over-temperature detection. after cooling down with thermal hysteresis, the devices switches on again. please refer to figure 12 for details. t j = 25c
smart high-side power switch bts 6142d protection functions data sheet 18 v1.0, 2005-10-25 figure 12 overload behavior 4.2.2 short circuit impedance the capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance. figure 13 outlines allowable combinations for a single short circuit event of maximum, secondary inductance for given secondary resistance. figure 13 short circuit 4.2.3 reverse polarity protection - reversave tm the device can not block a current flow in reverse battery condition. in order to minimize power dissipation, the device offers reversave tm functionality. in reverse polarity condition the channel will be switched on provided a sufficient gate to source voltage is generated v gs v rbb . please refer to figure 14 for details. v_on_det ect . emf t v on t i l i in t t m i lx(sc) t d(sc1) v onx > v on(sc) ? j i l t thermal hysteresis t i in over_temp . emf t over temperature detection v on(sc) detection short_circuit.emf v bb is in profet out v bb 10m ? 5uh r sc l sc lo ad short circuit ?

smart high-side power switch bts 6142d protection functions data sheet 19 v1.0, 2005-10-25 figure 14 reverse battery protection additional power is dissipated by the integrated r bb resistor. use following formula for estimation of overall power dissipation p diss(rev) in reverse polarity mode. for reverse battery voltages up to v bb <16v the pin in or the pin is should be low ohmic connected to signal ground. this can be achieved e.g. by using a small signal diode d in parallel to the input switch or by using a small signal mosfet driver. for reverse battery voltages higher then v bb >16v an additional resistor r in is recommended. for reverse battery voltages higher then v bb >16 the overall current through r bb should be about 80ma. note: no protection mechanism is active during reverse polarity. the ic logic is not functional. reverse. emf in - i l load r bb v bb r in logic is r is - v bb - i in power ground signal ground - i is i rbb d p diss(rev) r on(rev) i l 2 ? r bb i rbb 2 ? + 1 r in --------- 1 r bb --------- - + 0,08a v bb 12v ? ----------------------------- =
smart high-side power switch bts 6142d protection functions data sheet 20 v1.0, 2005-10-25 4.2.4 over-voltage protection beside the output clamp for the power stage as described in section 4.1.3 there is a clamp mechanism implemented for all logic pins. see figure 15 for details. figure 15 over-voltage protection 4.2.5 loss of ground protection in case of complete loss of the device ground connections the bts 6142d securely changes to or remains in off state. 4.2.6 loss of v bb protection in case of complete loss of v bb the bts 6142d remains in off state. in case of loss of v bb connection with charged inductive loads a current path with load current capability has to be provided, to demagnetize the charged inductances. it is recommended to use a diode, a z-diode, or a varistor ( v zl + v d < 39 v or v zb + v d < 16 v if r in = 0). for higher clamp voltages currents through in and is have to be limited to 120 ma. please refer to figure 16 for details. figure 16 loss of v bb overvolt age . emf in r bb v bb logic v z,is v z,in is out in r bb v bb logic is v bb r is r in v d v zl inductive load vbb_disconnect _a. emf in v bb logic is v bb r is r in inductive load v d v zb vbb_disconnect _b. emf r bb
smart high-side power switch bts 6142d protection functions data sheet 21 v1.0, 2005-10-25 4.2.7 electrical ch aracteristics v bb = 12 v, t j = +25 c (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max. over-load protection 4.2.1 load current limitation 1) 2) t j = -40 c t j = +25 c t j = +150 c i l6(sc) - - 50 110 100 75 160 - - a v on = 6 v, (tab to pin 1 and 5) 4.2.2 load current limitation 2) t j = -40 c t j = +25 c t j = +150 c i l12(sc) - - 45 90 80 70 120 - - a v on = 12 v, t m = 170 s, (tab to pin 1 and 5) 4.2.3 load current limitation 1) 2) t j = -40 c t j = +25 c t j = +150 c i l18(sc) - - 30 60 60 50 90 - - a v on = 18 v, (tab to pin 1 and 5) 4.2.4 load current limitation 2) t j = -40 c t j = +25 c t j = +150 c i l24(sc) - - - 40 40 35 - - - a v on = 24 v, t m = 170 s, (tab to pin 1 and 5) 4.2.5 load current limitation 1) 2) t j = -40 c t j = +25 c t j = +150 c i l30(sc) - - - 25 25 25 - - - a v on = 30 v, (tab to pin 1 and 5) 4.2.6 short circuit shutdown detection voltage 1) v on(sc) 2.5 3.5 4.5 v v bin > 10 v typ. 4.2.7 short circuit shutdown delay after input current pos. slope 3) t d(sc1) 200 650 1200 s v on > v on(sc) , t j = -40 ? 150 c 4.2.8 thermal shut down temperature t j(sc) 150 165 1) -c - 4.2.9 thermal hysteresis 1) ? t j -10-k -
smart high-side power switch bts 6142d protection functions data sheet 22 v1.0, 2005-10-25 reverse battery 4.2.10 on-state resistance in case of reverse polarity v bb =-8v, t j =25 c 1) v bb =-8v, t j =150 c 1) v bb =-12v, t j =25 c v bb =-12v, t j =150 c r on(rev) - - - - 12 20 12 18 16 27 15 24 m ? v in = 0, i l = -7.5a, r is = 1 k ? , (pin 1 and 5 to tab) 4.2.11 integrated resistor in v bb line r bb - 100 150 ? - over-voltage 4.2.12 over-voltage protection v z v i bb = 15 ma, t j = -40 ? 150 c input pin v z,in 63 67 - v sense pin v z,is 56 61 - v 1) not subject to production test, specified by design 2) short circuit current limit for max. duration of t d(sc1) , prior to shutdown, see also figure 12 . 3) min. value valid only if input ?off-signal? time exceeds 30 s v bb = 12 v, t j = +25 c (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max.
smart high-side power switch bts 6142d diagnosis data sheet 23 v1.0, 2005-10-25 4.3 diagnosis for diagnosis purpose, the bts 6142d provides an intellisense signal at the pin is. the pin is provides during normal operation a sense current, which is proportional to the load current as long as v b,is >5v. the ratio of the output current is defined as k ilis = i l / i is . during switch-on no current is provided, until the forward voltage drops below v on <1v typ. the output sense current is limited to i is,lim . the pin is provides in case of any fault conditions a defined fault current i is(fault). fault conditions are over-current ( v on >1v typ.), current limit or over-temperature switch off. the pin is provides no current during open load in on, de-energisation of inductive loads and inverse current mode. figure 17 block diagram: diagnosis table 1 truth table parameter input current level output level current sense i is normal operation l 1) h 1) l h 0 ( i is(ll) ) nominal overload l h l h 0 ( i is(ll) ) i is,fault short circuit to gnd l h l l 0 ( i is(ll) ) i is,fault overtemperature l h l l 0 ( i is(ll) ) i is,fault short circuit to v bb l h h h 0 ( i is(ll) ) < nominal 2) open load l h z 1) h 0 ( i is(ll) ) 0 ( i is(lh) ) sense.emf r bb v is v b,i s i i s(f ault ) v bb r is i is is v z,is
smart high-side power switch bts 6142d diagnosis data sheet 24 v1.0, 2005-10-25 the accuracy of the provided current sense ratio ( k ilis = i l / i is ) depends on the load current. please refer to figure 18 for details. a typical resistor r is of 1 k ? is recommended. figure 18 current sense ratio k ilis 1) details about timings between the diagnosis signal i is , the forward voltage drop v on and the load current i l in on-state can be found in figure 19 . note: during operation at low load current and at activated forward voltage drop limitation the ?two level control? of v on(nl) can cause a sense current ripple synchronous to the ?two level control? of v on(nl) . the ripple frequency increases at reduced load currents. 1) h = ?high? level, l = ?low? level, z = high impedance, potential depends on external circuit 2) low ohmic short to v bb may reduce the output current i l and therefore also the sense current i is . 1) the curves show the behavior based on characterization data. the marked points are guaranteed in this data sheet in section 4.3.1 (position 4.3.1 ). ! "# $ "#
smart high-side power switch bts 6142d diagnosis data sheet 25 v1.0, 2005-10-25 figure 19 timing of diagnosis signal in on-state switchon.emf v on i in t v on <1v typ. i l1 i l2 i is1 i is2 t son(is) t slc(is) i l i is 0.9* i is1 i i s(f ault ) v on >1v typ. i is(lim) i i s(ll) t t t i in v on t v on >v on(sc) over-temperature i lx(sc) t delay(f ault ) i l i is i is(fault) t t t i l v on <1v typ. i is(fault) short normal operation
smart high-side power switch bts 6142d diagnosis data sheet 26 v1.0, 2005-10-25 4.3.1 electrical characteristics v bb = 12 v, t j = 25 c (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max. load current sense 4.3.1 current sense ratio, static on-condition k ilis -10-k v in = 0 v, i is < i is,lim i l =30a i l =7.5a i l =2.5a i l =0.5a 8 7.5 6.5 3 10 10 10 10 12 13 16 30 t j = -40..150 c i in = 0 (e.g. during de energizing of inductive loads) 1) 1) not subject to production test, specified by design disabled - - 4.3.2 sense saturation current 1) i is(lim) 2.5 6 10 ma v on < 1 v, typ. t j = -40 ? 150 c 4.3.3 sense current under fault conditions i is(fault) 2.5 6 10 ma v on > 1 v, typ. t j = -40 ? 150 c 4.3.4 current sense leakage current i is(ll) ?0.10.5 a i in = 0 4.3.5 current sense offset current i is(lh) ?0.11 a v in = 0, i l 0 4.3.6 minimum load current for sense functionality i l(min) 0.5 ? ? a v in = 0, t j = -40 ? 150 c 4.3.7 current sense settling time to 90% i is_stat. 1) t son(is) ? 350 700 s i l =0 20a t j = -40 ? 150 c 4.3.8 current sense settling time to 90% i is_stat. 1) t slc(is) ?50100 s i l =10 20a t j = -40 ? 150 c 4.3.9 fault-sense signal delay after input current positive slope t delay(fault) 200 650 1200 s v on > 1 v, typ. t j = -40 ? 150 c
smart high-side power switch bts 6142d package outlines bts 6142d data sheet 27 v1.0, 2005-10-25 5 package outlines bts 6142d p-to-252-5-1 (plastic dual small outline package) you can find all of our packages, sorts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products. dimensions in mm smd = surface mounted device
smart high-side power switch bts 6142d revision history data sheet 28 v1.0, 2005-10-25 6 revision history version date changes v1.0 04-10-25 initial version of final data sheet
edition 2005-10-25 published by infineon technologies ag, st.-martin-strasse 53, d-81541 mnchen, germany ? infineon technologies ag 10/26/05. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies re presentatives worldwide. warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your neare st infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. smart high-side power switch bts 6142d data sheet 29 v1.0, 2005-10-25
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